As it has recently been demonstrated, the internal distribution of carrier concentration and temperature is accessible to accurate measurements by various infrared laser probing techniques. In this work we present an advanced method for the validation and calibration of electrothermal device models which is based on experimental results obtained by these methods. As an example, numerical investigation of a pin power diode and an insulated gate bipolar transistor reveals Joule and recombination heat to be the most significant effects on the temperature profile. The very sensitive Internal Laser Deflection method enables the experimental detection of the Peltier heat at metal contacts, thus verifying the thermal boundary conditions in the simulation. As it can be seen from Backside Laser Probing, the strong rise of temperature during short circuit operation is also accurately reproduced by the calibrated numerical simulation.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 213 - 217
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems