In CMOS process and device simulations, characterization of complete dopant profiles in the channel region is essential for accurate simulations. We have developed a simple, fast and inexpensive methodology for characterizing CMOS channel dopant profiles using analytical equations, which can be calibrated and validated easily using CV measurements. The calibrated model can predict channel dopant profiles for complex redistribution and diffusion process like dopant loss of phosphorus in PMOS devices.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 199 - 204
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems