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TechConnect Proceedings Papers

Pre-Physical Design Analysis and Optimization of Repeaters Based on Technology Node, Materials, Devices, and Repeater Options

Lynch W.T., Independent Consultant, US
For the first time a comprehensive methodology has been applied to the pre-physical design of hierarchical interconnect wiring with consideration of the limitations of both the device and the wiring technologies (Fig. 1). The overall [...]

Modeling the Microstructure and Elastic Properties of Complex Materials

Roberts A.P., Garboczi E.J., University of Queensland, AU
The finite element method is used to study the influence of porosity and pore shape on the elastic properties of model porous media. The Young's modulus of each model was found to be practically independent [...]

Strength of Nanoscale Copper Connection Under Shear

Heino P., Tampere University of Technology, FI
Strength and shear modulus of several polycrystalline copper systems were calculated with the molecular dynamics method and effective-medium potential. Grain size varied between 2{10nm and systems were sheared beyond the yield point at room temperature. [...]

Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring

Horn A., Schröder H., Obermeier E., Wachutka G., Münich University of Technology, DE
We present a new model of three-dimensional orientation-dependent etching of Si{100}. Recent experimental results suggest to conceive etching as a “peeling” process of terraced planes, leading to the concept of a “step flow model of [...]

On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations

Hoffmann T., Dombrowski K.F., Senez V., IEMN-ISEN, UMR CNRS, FR
Shallow trench isolations (STI) process needs careful optimization of thermal annealings in order to minimize leakage currents which may result from excessive mechanical stresses. Due to its intrinsic three-dimensional structure, conventional 2D process simulator is [...]

Modeling of the Self-Limiting Oxidation for Nanofabrication of Si

Chen Y., University of California, US
The self-limiting oxidation method has been frequently used to fabricate the nano-scale (e.g., sub-5 nm) Si columns and widely reported in the recent literature [1, 2]. However, few theoretical modeling has been carried out to [...]

Systematic Global Calibration of a Process Simulator

Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Kong J-T., Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Baek D-H., Samsung Electronics Co.Ltd., KR
This paper proposes a novel methodology of systematic global calibration of a process simulator and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the whole [...]

Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles

Ciampolini L., Ciappa M., Malberti P., Fichtner W., Swiss Federal Institute of Technology, CH
Accurate prediction of doping distributions in modern VLSI devices (e.g. shallow junctions) with TCAD tools represents a major challenge which requires the process simulation models to be accurately tuned on the basis of two-dimensional dopant [...]

Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method

Ban Y., Yoon S., Kwon O., Won T., Inha University, KR
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and an ultra-low energy (sub 2keV) Monte-Carlo ion implantation model are suggested. The dopant and damage profiles show [...]

Robust Ion-Implantation Process Design through Statistical Analysis

Sudhama C., Thoma R., Morris M., Christiansen J., Lim I-S., Motorola Digital DNA Labs, US
In this work, for the first time, we present a TCAD methodology to rigorously account for statistical variations due to these random process errors (inherent in all semiconductor processes), and thereby design a robust ion-implantation [...]

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