Advanced compact models are evaluated for simulation of mixed analog-digital circuits working at low temperature (77 to 200 K). This evaluation is performed on a dual gate oxide CMOS technology with 0.18 µm / 1.8 V and 0.35 µm / 3.3 V MOSFET transistors. A detailed temperature analysis of some physical effects is performed. Specific effects, such as anomalous narrow width effect or quantization of the inversion charge, are observed at low or intermediate temperature. Some improvements of compact models will allow a very accurate description of MOS transistors at low temperature.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 865 - 868
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling