thermal noise – TechConnect Briefs

Charge-Based Formulation of Thermal Noise in Short-Channel MOS Transistors

Paim V.C., Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

In this communication we present a charge-based formulation for the thermal noise in short-channel MOS transistors. We arrive at a closed expression for the channel noise including velocity saturation for all the operating regions of [...]

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Scholten A.J., Tiemeijer L.F., van Langevelde R., Zegers-van Duijnhoven A.T.A., Havens R.J., Zegers-van Duijnhoven A.T.A., Venezia V.C., Klaassen D., Philips Research Laboratories Eindhoven, NE

The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the [...]

RF Noise Models of MOSFETs- A Review

Asgaran S., Jamal Deen M., McMaster University, CA

A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated [...]

Recent Enhancements of MOS Model 11

van Langevelde R., Scholten A.J., Klaassen D.B.M., Philips Research Laboratories, NL

MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, [...]