surrounding gate MOSFETs – TechConnect Briefs

A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs

He J., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., Chan M., Peking University, CN

An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]

Compact Models for Double Gate and Surrounding Gate MOSFETs

Abebe H., Cumberbatch E., Morris H., Uno S., San Jose State University, US

The models presented by Lu and Taur, [1], for lightly doped double gate and surrounding gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present explicit, analytic solutions of these [...]

Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs

Lu H., Taur Y., University of California at San Diego, US

A physics-based, non-charge-sheet analytic potential model is presented for undoped (or lightly doped) Double Gate (DG) MOSFETs. With only the mobile charge term included, Poisson’s equation is rigorously solved and the electrostatic potential is derived [...]