surrounding-gate MOSFET – TechConnect Briefs

Simulation Study on Dopant Fluctuation Impact on SRG MOSFET Device and Circuit Performane

Wang H., He J., Liu Y., Peking University Shenzhen SOC Key Laboratory, CN

This paper investigates the impact of random dopant fluctuation on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom [...]

Impact of Non-Uniformly Doped and Multilayered Asymmetric Gate Stack Design on Device Characteristics of Surrounding Gate MOSFETs

Kaur H., Kabra S., Haldar S., Gupta R.S., University of Delhi, IN

In the present work, a new structural concept, non-uniformly doped multilayered asymmetric gate stack (ND-MAG) surrounding gate MOSFET has been proposed and it has been demonstrated using analytical modeling and simulation that ND-MAG SGT leads [...]

A Continuous yet Explicit Carrier-Based Core Model for the Long Channel Undoped Surrounding-Gate MOSFETs

Zhang J., Zhang L., He J., Liu F., Zhang J., Zhang L., Feng J., Ma C., Peking University, CN

An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact [...]

A Carrier Based Analytic Model for Undoped Surrounding-Gate MOSFETs

He J., Zhang X., Chan M., Wang Y., Peking University, CN

A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of [...]

A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model

Chen Y., Luo J., University of California-Berkeley, US

An analytical model for the electric characteristics of ultrathin double-gate and surrounding-gate MOSFETs in strong inversion and accumulation is presented. The analytical solutions to the 1-D simplified Poisson's equation in both Cartesian and cylindrical coordinates [...]