SiO2 – TechConnect Briefs

Insulator oxide film formation with acid catalyzed hydrolysis of alkoxides in supercritical fluid carbon dioxide

Wang J-S., Wai C.M., Brown G.J., Apt S.D., Campo A.M., Landis G.R., Air Force Research Laboratory, US

Insulator oxide films can be produced by hydrolysis of metal alkoxide precursors in the presence of an acid catalyst in supercritical fluid carbon dioxide(sc-CO2). In this study, a new process has been developed to cover [...]

Comparison of Electrical performance of Symmetric Toggle Switch with different dielectric layers

Maninder K., Central Electronics Engineering Research Institute, IN

This paper presents the electrical performance comparison of Symmetric Toggle RF MEMS Switch (STS), by incorporating hafnium oxide (HfO2) as a dielectric material instead of silicon dioxide (SiO2). Fig. 1(a) and (b) shows the 3-D [...]

Surface modification of SiO2 micro spheres by NiFe2O4 nanoparticles

Prakash I., Nallamuthu N., Muralidharan P., Venkateswarlu M., Satyanarayana N., Pondicherry University, IN

NiFe2O4 nanocrystals are important magnetic materials because of their numerous applications in various fields like recording media, ferrofluids, magneto optics, spintronics, microwave devices, etc. Recently, ferrites are also used as gas and humidity sensor materials [...]

Practical issues with ion beam milling in acoustic resonator technologies

Mishin S., Oshmyansky Y., Bi F., Advanced Modular Systems, Inc, US

A practical approach to addressing production issues of thickness trimming was demonstrated through two-step trimming, send-ahead wafer, and deposition/trimming cluster tool. Thickness control necessary in SAW/BAW technology was demonstrated.

Interface-trap Charges on Recombination DC Current-Voltage Characteristics in MOS transistors

Chen Z., Jie B.B., Sah C-T, Nanyang Technological University, SG

The interface traps and trapped charges along the surface channel region are generated during transistor stress or operation and primarily responsible for the changes of device properties. The threshold voltage is varied by the generation [...]

High Conentration of Interface Traps in MOS Transistor Modeling

Chen Z., Jie B.B., Sah C-T, Xiamen University, CN

Modifications of the MOS capacitor and transistor characteristics by the presence of a high concentration of interface traps are described. Change or distortion of the gate/base voltage dependent characteristics are presented, such as the gate [...]

The effect of electric field on the surface of nanoparticles (TiO2 & SiO2) and its application to retardation of membrane fouling

Park S-E, Park S-J, Ry D-Y, Kwak J-W, Lee S-W., Park S-E, Park S-J, Associate Professor, Kyungwon University, KR

Since electrostatic device has been practiced for anti-foulant treatment effect on processing the industrial wastewater, the electric force is suspected to induce the alteration of surface charges of colloidal particles in the aspect of reducing [...]

Photoluminescence and Photoluminescence Excitation Measurements of Eu-Doped Nano-Si/SiO2 Thin Films

Nery G.A., Fonseca L.F., Liu H., Resto O., Weisz S.Z., University of Puerto Rico at Rio Piedras, PR

Europium (Eu) ions are already used in significant visual technological applications. We attempted to determine if a silicon nanoparticle (nano-Si) / Europium interaction could occur. The energy transfer from nano-Si to rare earth ions has [...]

Ab Initio Molecular Dynamics Study of the Pressure Induced Phase Transformations in Cristobalite

Klug D.D., Rousseau R., Uehara K., Bernasconi M., Tse J.S., National Research Council of Canada, CA

The mechanism for the pressure induced transformation of cristobalite to stishovite and post-stishovite phases has been obtained from constant pressure ab initio molecular dynamics simulations. The cristobalite to stishovite transformation is found to be a [...]