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HomeKeywordssimulation

Keywords: simulation

Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode

Zemliak A., Celaya C., Garcia R., Puebla Autonomous University, MX
On the basis of an IMPATT diode complex mathematical model and an optimization procedure, results are presented for a diode structure analysis and optimization suitable for a pulsed-mode 2 mm silicon diode. The complex model [...]

Closed-Loop MOSFET Doping Profile Optimization for Portable Systems

Stockinger M., Strasser R., Plasun R., Wild A., Selberherr S., TU Vienna, AT
We present a new closed-loop simulation-based optimization process for a 100 nm MOSFET for portable systems such as subscriber units for wireless communications, yielding an almost double drive performance at equivalent stand-by power when compared [...]

Simulation of the Frequency Limits of SiGe HBTs

Geßner J., Schwierz F., Mau H., Nuernbergk D., Roßberg M., Schipanski D., Technische Universitat Ilmenau, DE
The dynamic performance of SiGe HBTs in terms of the cut off frequency and the maximum frequency of oscillation is investigated by numerical device simulation. Simulations based on both the Drift Diffusion Model and the [...]

Offset Analysis in CMOS Magnetotransistors by Numerical Simulation

Metz M., Baltes H., ETH Zürich, CH
Signal offset in magnetotransistors is for the first time analyzed by numerical simulation. Offset needs to be mini-mized to improve the accuracy of low cost CMOS contact-less angle detection systems. The offset is an unwanted [...]

A New Analytical Energy Relaxation Time Model for Device Simulation

Palankovski V., Kosina H., Hernandez A., Selberherr S., TU Vienna, AT
We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed [...]

Analysis of Unstable Behavior Occurring in Electro-Mechanical Microdevices

König E-R, Wachutka G., Münich University of Technology, DE
We analyze the instability which is inherent to electrostatically driven microdevices. Further, we propose a homotopy method to overcome this difficulty during simulation of these devices. Starting from a simplified model, the governing differential equations [...]

A Design Tool for Inductive Position and Speed Sensors via a Fast Integral Equation Based Method

Kamon M., Nguyen A-M., Gilbert J.R., Microcosm Technologies, Inc., US
This paper describes using 3D integral equation based simulation in combination with simulation managment to provide a design tool for an eddy-current inductive position and speed sensor under development at CSEM Microsystems. Both the frequency [...]

Circuit Simulation of Quantum Well Bistable Laser Diodes

Madhan M.G., Vaya P.R., Gunasekaran N., Anna University, IN
A large signal electrical equivalent circuit for the multi quantum well bistable laser diode has been developed from the rate equations. The dc and transient analysis are carried out using PSPICE circuit simulator. It is [...]

Coupled Package-Device Modeling for MEMS

Bart S.F., Zhang S., Rabinovich V.L., Cunningham S., Microcosm Technologies, Inc., US
Microelectromechanical Systems (MEMS), by their nature as sensors and actuators, require application specific packaging. The package is the near environment of the MEMS device and hence has a direct effect on its thermal behavior, on [...]

Complete Characterization of Electrostatically-Actuated Beams Including Effects of Multiple Discontinuities and Buckling

Chan E.K., Garikipati K., Dutton R.W., Stanford University, US
The entire process of calibrating an electromechanical simulator ñ identifying relevant parameters, designing and measuring test structures, extracting parameters using detailed electromechanical simulations, and extrapolating the behavior of an actual device ñ is presented. The [...]

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