silicon – Page 8 – TechConnect Briefs

Modeling of Acoustic-Structural Coupling in a MEMS Hydrophone

Johnson H.T., Prevot L., Boston University, US

The coupling of acoustics and structural dynamics is of primary importance in the design of MEMS based microphones for use in liquid environments. A three-dimensional finite element study of acoustic-structural coupling is presented here for [...]

Modelling of Processes of Photoacoustic Diagnostic with Piezoelectric Detection

Vertsanova O., Perlov I., Tsyganok B., National Technical University of Ukraine, UA

Authors developed the one-dimensional mathematical model of piezoelectric detection of photoacoustic effect in thermally thick and optically opaque sample with subsurface defect. The model is developed in view of the assumptions of ideally rigid connection [...]

Simulation Of Point Defect Clustering In Cz-Silicon Wafers On The Cray T3E Scalable Parallel Computer: Application To Oxygen Precipitation

Karouri F.S., Karoui A., Rozgonyi G.A., North Carolina State University, US

The oxygen precipitation in high purity CZ-silicon for ULSI is investigated with regard to the LO-HI and HI-LO-HI annealing processes used for denuded zone formation. The precipitation can be treated as a stochastic phenomenon and [...]

Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring

Horn A., Schröder H., Obermeier E., Wachutka G., Münich University of Technology, DE

We present a new model of three-dimensional orientation-dependent etching of Si{100}. Recent experimental results suggest to conceive etching as a “peeling” process of terraced planes, leading to the concept of a “step flow model of [...]

Ab-Initio TCAD Models of Dopant Diffusion in Silicon

Nelson J.S., Wright A.F., Schultz P.A., Sandia National Laboratory, US

The rapid pace of the silicon microelectronics industry, and its need for physics-based TCAD models of dopant diffusion, is coinciding with the tremendous algorithmic and computational advances occurring within modern ab initio electronic structure methods. [...]

Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon

Son M-S., Hwang H-J., Chung-Ang University, KR

In this work, we presents a newly proposed and enhanced damage model for the accurate prediction of both as-implanted impurity and point defect profiles in Monte Carlo simulation of ion implantation in (100) crystalline silicon. [...]

Nitrous Oxide-Based Progressive Silicon Oxynitridation in Furnaces of Different Dimensions

Dang S.S., Takoudis C.G., University of Illinois - Chicago, US

As integrated device technologies enter the deep sub-half micron regime, there is a need for a corresponding reduction in the thickness of the dielectrics too. After formation of the dielectric film, maintenance of its characteristics [...]

Development of Periodical Spatial Distribution of Donor States in Heat-Treated Silicon

Selishchev P., Kyiv Tarasa Shevchenko University, UA

It is considered kinetics of oxygen thermo-donor states formation in silicon when atomically dissolved oxygen reacts to form a sequence of kinetically linked aggregates (complexes). One takes into account oxygen diffusion and elastic interaction between [...]

SEGS: On-line WWW Etch Simulator

Li G., Hubbard T., Antonsson E.K., Daltech-Dalhousie University, CA

This paper presents an interactive on-line wet etch simulator (SEGS) which predicts the etched shape as a function of time for arbitrary isotropic or anisotropic etchants and any initial mask shape. Using any Javaenabled web [...]

Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment

Ionescu A.M., Mathieu N., Chovet A., LPCS/ENSERG, FR

In this paper both offset and absolute/relative sensitivities of MAGFET (MAGnetic Field Effect Transistor) are investigated as functions of the drain and gate voltages. Accurate physical and analytical models are developed allowing the identification of [...]