silicon – Page 7 – TechConnect Briefs

Photoluminescence and Photoluminescence Excitation Measurements of Eu-Doped Nano-Si/SiO2 Thin Films

Nery G.A., Fonseca L.F., Liu H., Resto O., Weisz S.Z., University of Puerto Rico at Rio Piedras, PR

Europium (Eu) ions are already used in significant visual technological applications. We attempted to determine if a silicon nanoparticle (nano-Si) / Europium interaction could occur. The energy transfer from nano-Si to rare earth ions has [...]

Strain Effect on the Final State Density-of-State for Hole Scattering in Silicon

Matsuda K., Nakatsuji H., Kamakura Y., Naruto University of Education, JP

Recently, strained-Si on Si1-xGe_x subtrate attracts considerable attention so as to enhance the carrier mobility in MOSFETs. The hole transport mechanism, however, has no been completely understood yet. The most important problem this mechanism is [...]

Merging Atomistic and Continuum Simulations of Silicon Technology – The Best from the Two Worlds

Pichler P., Fraunhofer Institute for Integrated Circuits, DE

Simulation of diffusion processes during front-end silicon process stepes needs to address a variety of highly complicated phenomena. In industrial environments, such simulations are nearly entirely based on continuum approaches. The physics entering into the [...]

Atomic-control Placement of Individual P atoms in Si for the Fabrication of a Quantum Computer Qubit Array

Schofield S.R., Curson N.J., Simmons M.Y., Hallam T., Ruess F.J., Oberbeck L., Clark R.G., University of New South Wales, AU

The ability to control the location of individual dopant atoms within a semiconductor has enormous potential for the creation of atomic-scale electronic devices. One of the most ambitious proposals for such a device is the [...]

Fullband Particle-based Simulation of Optical Excitation in Silicon Pin Diodes

Wigger-Aboud S., Saraniti M., Goodnick S., Brodschelm A., Leitenstorfer A., Rush Medical Center and Illinois Institute of Technology, US

A fullband particle-based simulator is used to model photo-generated electron-hole pairs in Si. This work is motivated by experimental measurements of optically excited Si pin diodes. Results will be compared qualitatively to investigate charge transport [...]

Process for Extremely Thin Silicon-on-Insulator Wafer

Usenko A.Y., Carr W.N., Chen B., Silicon Wafer Technologies, Inc., US

We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before plasma processing. The buried defect layer is [...]

Ab Initio Simulation on Ideal Shear Strength of Silicon

Umeno Y., Kitamura T., Kyoto University, JP

Single crystal of silicon is commonly used for the substrate of electronic devices. Large stress is induced in the substrate due to thermal mismatch of device component. It is well known that a defect such [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Investigation of the Order Continuum of Quenched Silicon using Accelerated Molecular Dynamics Techniques

Choudhary D., Clancy P., Cornell University, US

The thermodynamic, electronic and structural properties of silicon phases are inextricably linked to the underlying order in the material. While the crystalline and amorphous phases are well characterized, the existence of a glassy silicon phase [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]