Simulation of diffusion processes during front-end silicon process stepes needs to address a variety of highly complicated phenomena. In industrial environments, such simulations are nearly entirely based on continuum approaches. The physics entering into the models, on the other hand, is based on atomistic concepts and benefits considerably from the atomistic simulation capabilities developed until now. The goal of the paper is to highlight the interplay of the methods as well as their specific advantages and limitations.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 133 - 136
Industry sector: Advanced Materials & Manufacturing
Topicss: MEMS & NEMS Devices, Modeling & Applications, Nanoelectronics