silicon – Page 5 – TechConnect Briefs

Quantum Correction for the Current-Based One-Particle Monte-Carlo Method

Brugger S.C., Wirthmueller A., Schenk A., ETH Zürich, CH

In a previous work we proposed a one-particle Monte-Carlo method based on equations for the currents. Our method has the advantage of being able to take into account arbitrary generation-recombination processes self-consistently. Recently, we extended [...]

400-900 nm Light Emitting Silicon Nanoparticles

Liptak R.W., Pi X.D., Kortshagen U., Campbell S.A., University of Minnesota, US

A novel process has been developed to create an aerosol of passivated silicon nanoparticles that emit controlled colors from blue to the near IR. The emission is stable in air. This is the first ever [...]

Electroluminescence from Surface Oxidized Silicon Nanoparticles Randomly Dispersed within a Polymer Matrix

Ligman R.K., Mangolini L., Kortshagen U., Campbell S.A., University of Minnesota, US

For the first time we have demonstrated hybrid silicon organic light emitting diodes. This process uses particles created in a nonthermal silane plasma which are treated by photo oxidation to passivate the surface. Particles were [...]

Growth and Engineering of High Aspect-Ratio AAO Templates Integrated on Silicon Substrates

Choi S., Daugherty M., Enable IPC Corporation, US

We have developed a CMOS-compatible process for manufacturing nanowires directly on silicon (or other) substrates. This process removes some of the steps for conventional nanowire manufacture. The result are highly-ordered, high aspect-ratio nanowires for use [...]

A Multiscale investigation of the influence of surface morphology on thin films CVD deposition

Barbato A., Rondanini M., Cavallotti C., Politecnico di Milano, IT

Growth rates and morphology of thin solid films deposited through Chemical Vapor Deposition processes are strongly dependent on chemical-physical events that occur at time and length scales differing by several orders of magnitudes. Models adopted [...]

Mechanics of silicon nanowires: size-dependent elasticity from first principles

Rudd R.E., Lee B., Lawrence Livermore National Laboratory, US

We have conducted a detailed study of the size dependence of the mechanical properties of silicon nanowires using first principles quantum mechanical calculation together with continuum mechanics theory and atomistic simulation based on empirical potentials. [...]

Dielectric Response in Silicon Nanostructures from first principles

Hamel S., Williamson A., Wilson H., Gygi F., Galli G., Ratner E., Wack D., Lawrence Livermore National Laboratory, US

In the next few years, the typical size of finFET devices used in the microchip industry is expected to be of the order of a few nanometers. This poses formidable challenges, including for optical metrology, [...]

First-Principles Study on Indium Diffusion in Silicon Substrate under Hydrostatic Strain

Yoon K-S, Kim Y.K., Won T., Inha University, KR

In this paper, we studied the effect of strain on indium diffusion. In order to investigate the stress effect, it is essential to find out the migration path of indium. Ab-initio study in this work [...]

N-channel Single Crystal Si Nanoparticle Schottky Barrier Transistor

Song S.H., Ding Y., Kortshagen U., Bapat A., Campbell S.A., University of Minnesota, US

A novel process has been developed by when large (~40 nm) cubic single crystals of silicon can be produced at high rates. In a previous paper we demonstrated that these particles can be used to [...]

Silicon Nanoparticles contacted by metal nanogaps for FET applications

Wolff K., Hilleringmann U., University of Paderborn, DE

A low-cost and simple fabrication technique is proposed to prepare a bottom-gate FET applying nanoparticles of silicon (nc-Si). Nanoparticles were contacted by metal nanogaps and characterised subsequently. Conclusions of contacting incorporated into further approaches of [...]