short channel effect – TechConnect Briefs

Modeling Process Variations Using a Compact Model

Murali R., Meindl J.D., Georgia Tech, US

Inclusion of manufacturing variations has become an important part of static timing analysis. Existing statistical timing analysis methods involve the use of time-consuming circuit simulations or use fit polynomials. Previous efforts at modeling parameter variations [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Park I-S, Won T., Inha University, KR

We propose a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is called “center-channel (CC) double-gate (DG) MOSFET, ”. The device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based [...]

Optimization of FIBMOSs through 2-D Device Simulations

Kang J., Schroder D.K., Pivin D.P., Arizona State University, US

Channel engineering can enhance the performance of MOSFETs. Focused ion beam (FIB) implant technology is one approach for such channel engineering. We have investigated FIB and present a sophisticated optimization technique for FIB MOSFETs (FIBMOS) [...]

A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling

Lim D., Lim K.Y., Zhou X., Lim D., Lim K.Y., Nanyang Technological University, SG

This paper presents a compact length-dependent saturation current (Idsat) model for deep-submicron MOSFETs based on accurate modeling of the threshold voltabe (Vth). The proposed unified model has considered all the important two-dimensional (2-D) short-channel effects, [...]

Methodology for Calibrating Process and Device Simulators by Extracting Model Parameters from Electrical Data

Ho H-M, Zu Y., Loiko K.V., Lim D.H.Y., Chartered Semiconductor Manufacturing Ltd., SG

This paper describes a physically based methodology for calibrating 2D semiconductor process and device simulators. The calibration begins with the determination of 1D and 2D doping profiles by means of extracting model parameters from electrical [...]