PZT – TechConnect Briefs

Piezoelectric actuators, next driver for MEMS market?

Allain M., Casset F., Desloges B., Dieppedale C., Fanget S., Le Rhun G., Nicolas S., CEA-LETI, FR

Over the past three decades, huge progresses have been made in MEMS technologies. Hundreds millions of MEMS, principally: accelerometers, gyroscopes and microphones, are commercialized yearly. This should continue to increase with upcoming new applications related [...]

Wafer level integration of epitaxial piezoelectric thin films for novel NEMS, MEMS and MOEMS applications

Dekkers M., Solmates BV, NL

It is well known that Pulsed Laser Deposition (PLD) is a very flexible and versatile technique allowing fast optimization of new and complex material thin films. The unique features of PLD allow for the integration [...]

Optimised Piezoelectric PZT Thin Film Production on 8” Silicon Wafers for Micromechanical Applications

Dudde R., Gu-Stoppel S., Kaden D., Kaltenbacher D., Quenzer H.-J., Wagner B., Fraunhofer Inst. Silicon Technology, DE

Piezoelectric materials are of great interest for powerful actuation in MEMS devices. Due to its large electromechanical coupling coefficient Lead Zirconate Titanate (PZT) is one of the most favourable materials for realisation of fast and [...]

High Performance Sputtered PZT Film for MEMS applications

Arakawa T., Birkmeyer J., Fujii T., Hishinuma Y., Li Y., Naono T., FUJIFILM Dimatix, US

We have developed a method of forming PZT films on silicon substrates with a high piezoelectric coefficient using RF sputtering. Films have been formed on 6 inch wafers with thickness variation of less than +/-5% [...]

Preparation of functional PZT films on 6” and 8” silicon wafers by high rate sputtering

Dudde R., Kaden D., Quenzer H.-J., Wagner B., Fraunhofer ISIT, DE

Crack and void free polycrystalline PZT films in the range of 2 µm to 6 µm have been successfully deposited on silicon wafers using a novel high rate gas flow sputtering process. The development of [...]

High Fidelit Loud Microspeaker Based on PZT Bimorph Diaphragm

Chen S.J., Choe Y., Kim E.S., University of Southern California, US

This paper describes a microspeaker (composed of a 8mm square mechanically-polished PZT bimorph diaphragm and bulk-micromachined silicon top cover) that shows flat diaphragm displacement from DC to 11 kHz. A bimorph diaphragm is formed by [...]

Enhanced Photocurrent in Transparent Lead Zirconate-Titanate Thin Film Capacitors Under Sun Light Illumination

Auciello O., Li H., Ocola L.E., Argonne National Laboratory, US

A report will be presented on research focused on developing transparent Pb(ZrxTi1-xO3) (PZT)–based capacitor for photovoltaic device applications. The transparent PZT-based capacitors exhibit high photocurrents when exposed to Xenon (Xe) light that has wavelengths from [...]

Deposition of functional PZT films as actuators in MEMS devices by high rate sputtering

Dudde R., Föll H., Jacobsen H., Quenzer H.-J., Wagner B., Fraunhofer ISIT, DE

Crack and void free polycrystalline Lead Zirconate Titanate (PZT) films in the range of 5 µm to 10 µm have been successfully deposited on silicon substrates using a novel high rate gas flow sputtering process. [...]

Biologically Functionalized Nanochannels on Ferroelectric Lead Zirconium Titanate Surfaces

Auciello O., Firestone M.A., Kuo M., Ocola L.E., Pan W.C., Reiss B.D., Tirumala V.R., Argonne National Laboratory, US

We recently started a program at Argonne to exploit patterned, polarizable ferroelectric surfaces, such as lead zirconium titanate (PZT), as a means to create field-responsive inorganic-biomolecule interfaces to study and manipulate biomatter on surfaces. In [...]

Preparation of PZT nanodots on Nano-Templated Substrates

Bowman R.M., Douglas C, Evans P, Gregg J.M., Lookman A., McMillen M.J.A., Pollard R.J., Queen's University, Belfast & Nanotec NI, UK

There is considerable interest in creation of nanoscale capacitor arrays. For example, in FeRAM technology, which has great potential, significant capacitor cell size reduction and transition to 3D structures, can be achieved within existing CMOS [...]