Crack and void free polycrystalline Lead Zirconate Titanate (PZT) films in the range of 5 µm to 10 µm have been successfully deposited on silicon substrates using a novel high rate gas flow sputtering process. Deposition rates of 200-250 nm/min were observed. These high sputter rates are about 20 – 25 times higher than reported from reactive magnetron sputtering and demonstrate the potential of this sputter technique. Based on this deposition process a membrane actuator consisting of a SOI layer and a sputtered PZT thin film was prepared. The sputtered PZT layers show a high dielectric constant er between 1000 and 1800 and a distinct ferroelectric hysteresis loop with a remanent polarisation of 17 µC/cm2 and a coercive field strength of 5.4 kV/mm.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 207 - 210
Industry sector: Sensors, MEMS, Electronics
Topic: Sensors - Chemical, Physical & Bio