Preparation of functional PZT films on 6” and 8” silicon wafers by high rate sputtering

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Crack and void free polycrystalline PZT films in the range of 2 µm to 6 µm have been successfully deposited on silicon wafers using a novel high rate gas flow sputtering process. The development of a process for uniform deposition of high quality piezoelectric materials on wafer scale will drastically lower the costs of actuator integration into new MEMS devices. The sputtered PZT layers show a high dielectric constant Er of 2000 and a distinct ferroelectric hysteresis loop with a remnant polarisation of 17 µC/cm2 and a coercive field strength of 5.4 kV/mm. Piezoelectric coefficients d33,f of 102 to 108pm/V have been determined using a standard aixACCT. A transverse piezoelectric module e31 = -10.9 C/m2 was measured.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 348 - 351
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications
ISBN: 978-1-4398-3402-2