non-classical MOSFETs – TechConnect Briefs

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

Numerical Analysis on Si-Ge Nanowire MOSFETs with Core-Shell Structure

Fu Y., He J., Liu F., Zhang L., Feng J., Ma C., Peking University, CN

This paper investigates the transport properties of the silicon/Germanium nanowire MOSFETs with core-shell structure by a numerical method. Coupling Poisson’s equation to Schrödinger’s equation for electrostatics calculation, and electron structure to current transport equation for [...]

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

He J., Liu F., Bian W., Tao Y., Wu W., Lu K., Wang T., Chan M., Peking University, CN

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

He J., Bian W., Tao Y., Li B., Chen Y., Peking University, CN

A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete [...]

A Carrier Based Analytic Model for Undoped Surrounding-Gate MOSFETs

He J., Zhang X., Chan M., Wang Y., Peking University, CN

A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of [...]