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Keywords: nanowire

Fabrication and Characterization of PEDOT Nanowires Based on Self Assembled Peptide Nanotube Lithography

Ormstrup Christiansen N., Andersen K.B., Castillo-León J., Svendsen W.E., Rozlosnik N., Technical University of Denmark, DK
In this article we demonstrate the use of self-assembled peptide nanotube structures as a masking material in a rapid, mild and low cost fabrication of PEDOT:TsO nanowire device. In this new fabrication approach the PEDOT:TsO [...]

Surface Passivation of GaAs Nanowires Ensembles for Photovoltaic Applications

Chia A.C.E., LaPierre R.R., McMaster University, CA
Fabrication, electrical characterization and analytical modeling of an AlInP-passivated GaAs NW ensemble is presented. Novel processing steps were used to fabricate NW ensemble devices which were subsequently characterized electrically and fit with an analytical model, [...]

Copper Oxide–Cobalt Oxide Nanoscale Heterostructures for Photocatalysis

Shi W., Chopra N., The University of Alabama, US
The research work discussed here will be focused on development of multifunctional nanoscale heterostructured photocatalysts comprised of oxides of copper and cobalt. Two fabrication approaches are described: a) solution and b) dry processing route. The [...]

A new method for vertical growth of silicon nanowire in the vapor-liquid-solid (VLS) process

Kim Y.J., Suh D., Lee M.L., Ryu H., Electronics and Telecommunications Research Institute (ETRI), KR
We present a new facile method for vertical growth of the silicon nanowire (Si NW) that obviates the need for SiCl4 in vapor-liquid-solid (VLS) process. The VLS process that involves SiCl4 has two major disadvantages; [...]

Inherently Radiation Hardened Electronics: A Examination of III-V Nanowire Transistors and Spin-Based Logic Devices

Telesca D., Air Force Research Lab (AFRL), US
This work will present two avenues currently being pursued for inherently radiation hardened electronics. It will examine the current development of III-V all-around gate oxide nano-wire transistors. The carriers in these nanowires have dramatically increased [...]

AuxAg1-x alloy seeds: A way to control growth, morphology and defect formation in Ge nanowiress

Biswas S., Holmes J.D., University College Cork, IE
Ge nanowires are of current interest for high speed nanoelectronic devices due to the lower band gap and high carrier mobility and larger excitonic Bohr radius of Ge yields a more pronounced quantum confinement effect.Most [...]

Morphological Studies on Nano-Neuronal Interactions

Islam A., Menon L., Northeastern University, US
Nanostructures are expected to play a key role in the fundamental investigation of neuronal activity at the nanoscale level. Neurons are complex structures with feature sizes ranging from the millimeter to micron to nanoscale regimes. [...]

Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects

Dura J., Martinie S., Munteanu D., Jaud M-A, Barraud S., Autran J-L, CEA/LETI/MINATEC, FR
The particular shape of Gate-All-Around (GAA) nanowires allows a much higher electrostatic control of the active region than conventional devices, as required for the integration at the end-of-roadmap. This architecture is suitable for ultra-scaled devices [...]

Jet-printed Si nanowires for flexible backplane applications

Wong W.S., Raychaudhuri S., Sambandan S., Lujan R., Street R.A., Palo Alto Research Center, US
The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW field-effect transistors (FETs) fabricated with various contact metals [...]

Bio-Molecules Immobilization on Nanowire Electronic Devices

Maki G., Maki W., Mishra N., Fellegy M., Cameron E., Maki G., Maki W., University of Idaho, US
Nano-scale Field Effect Transistor based devices (nano-FETs) have shown great promise in bio-molecular detection. The advantages of using electronic nano-devices verses using conventional bio-detection methods are: direct detection without labeling, ultra-sensitivity without amplification and simple [...]

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