nanoscale device – TechConnect Briefs

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability

He H., He J., Ma C., Wang C., Zhang A., He H., He J., Peking Univeristy, CN

A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model [...]

Analog/RF Performance Analysis of Coaxial Carbon Nanotube MOSFET from non-Equilibrium Green’s Function Simulation

Che Y., Chen Q., Liang H., Chen Q., Wang C., He H., Cao Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

the analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details in this paper based on the non-equilibrium [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio

Cheng H-W, Hwang C-H, Li Y., National Chiao Tung University, TW

For nano-CMOS device design, the device with multiple-fin structure has the superior short channel effect (SCE), high driving current and has been considered as an index as potential candidates. The feasibility of various multi-fin options [...]

Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices

Li T-Y, Li Y., Hwang C-H, Li T-Y, Li Y., National Chiao Tung University, TW

The magnitude of the intrinsic parameter fluctuations, such as process-variation and random dopant fluctuation, steadily increase with the reduction of device dimensions, and lead to pronounced component mismatch in area constrained circuits such as static [...]