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HomeKeywordsHiSIM

Keywords: HiSIM

Compare and Contrast HiSIM-LDMOS and BSIM based compact model of High Voltage MOSFETs for Analog Applications

Young A., Hall J., Luo Z., Xiao Y., Connerney D., Fairchild Semiconductor, US
A pair of scalable spectre models, one utilizes the Surface Potential based HiSIM-LDMOS model, and the other, the conventional Vth-based BSIM3v3 model, were extracted based on a test vehicle designed with both Drain-Extended CMOS and [...]

Compact Model HiSIM-DG both for Symmetrical and Asymmetrical DG-MOSFET Structures

Ishimura K., Sadachika N., Kusu S., Miura-Mattausch M., Hiroshima University, JP
In this work, the circuit simulation model for DG-MOSFET named HiSIM-DG, has been developed based on the complete surface-potential-based description. The model solves the Poisson equation to the vertical direction iteratively in quasi-2 dimensions including [...]

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Miura-Mattausch M., Hosokawa S., Navarro D., Matsumoto S., Ueno H., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kage T., Miyamoto S., Hiroshima University, JP
Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is [...]

A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology

Iino Y., Silvaco Japan, JP
This paper reports HiSIM-1.2 Spice model parameter extraction for a practical 90 nm technology devices. The extraction sequence with the measurement data will be exhibitted. The number of optimized HiSIM parameters were only 19 out [...]

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Miura-Mattausch M., Hosokawa S., Navarro D., Matsumoto S., Ueno H., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kage T., Miyamoto S., Hiroshima University, JP
Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is [...]

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