device modeling – TechConnect Briefs

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles

Fjeldly T.A., Monga U., Norwegian University of Science and Technology, NO

A compact, unified and analytical model is presented for the 3D electrostatics of nanoscale, multigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson’s equation (above threshold), where suitable [...]

Squeeze-Film Damping in Perforated Microstructures: Modeling, Simulation and Pressure-Dependent Experimental Validation

Niessner M., Schrag G., Iannacci J., Wachutka G., Münich University of Technology, DE

The reliable estimation of squeeze-film damping (SQFD) is a prerequisite for the design of many microelectromechanical systems (MEMS). The proper operation of several MEMS devices (e.g. accelerometers) often depends crucially on the damping forces, i.e. [...]

Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs

Fjeldly T.A., Monga U., Norwegian University of Technology, NO

We have previously shown that the subthreshold potential distribution of DG and circular gate MOSFETs can be precisely modeled using conformal mapping techniques. Simpler, unified models suitable for circuit design can also be established for [...]

Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

Abebe H., Cumberbatch E., USC, US

A 2-D channel electrostatic potential model of CNTFET is presented. The model is developed by directly solving Laplace’s equation in cylindrical coordinates with appropriate boundary conditions. To the best of our knowledge, the Technology Computer [...]

A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs

Cousin B., Reyboz M., Rozeau O., Jaud M-A, Ernst T., Jomaah J., CEA/LETI/MINATEC, FR

A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface [...]

SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application

Abebe H., Tyree V., Cockerham N.S., USC/ISI MOSIS, US

The SPICE BSIM3v3.1 model parameters extraction and optimization strategy that we present here is applicable for a half micron technology and circuits operating at temperature ranging from -191 to 125 0C. The room temperature extraction [...]

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, NO

A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body [...]

Capacitance modeling of Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

Based on our framework model of the electrostatics and the drain current in short-channel, nanoscale DG and GAA MOSFETs, we here present a corresponding model for the device capacitances covering all regimes of operation from [...]

Compact Modeling Framework for Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

To achieve sufficient accuracy in the compact modeling of short-channel, nanoscale DG and GAA MOSFETs, the multi-dimensionality of the body potential and the electronic charge distribution has to be accurately described. In sub-threshold, the device [...]

Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

Abebe H., Cumberbatch E., Morris H., Tyree V., USC/ISI, US

Quantum effects on MOS structures investigation.