compact model – Page 9 – TechConnect Briefs

A Distributed Compact Model for High-Density, On-Chip Trench Capacitors in High-Frequency Applications

Shastri S., Wu Y., Cai W.Z., Grivna G., ON Semiconductor, US

In this paper we describe for the first time a distributed model for the trench capacitor, which includes process parameters that may be extracted from the low-frequency measurement of one or two capacitor geometries. The [...]

Compact Model of a Laminar Micro Mixer

Cupelli C., Koltay P., Zengerle R., Santer M., University of Freiburg, DE

In this paper we discuss a novel approach towards a system-level description for microreactors. In particular, a compact model for laminar micromixers for fluids with different viscosities is presented. We show how the well known [...]

Compact Models for Squeeze-Film Damping in the Slip Flow Regime

Sattler R., Wachutka G., Technical Univeristy of Münich, DE

We propose a mixed-level simulation scheme for squeeze film damping effects in microdevices, which makes it possible to include damping effects in system-level models of entire microsystems in a natural, physically-based and flexible way. Our [...]

Extending the Validity of Existing Squeezed-Film Damper Models with Elongations of Surface Dimensions

Veijola T., Pursula A., Helsinki University of Technology, FI

Border flow effects in squeezed-film dampers having a gap separation comparable with the surface dimensions are studied with 2D and 3D FEM simulations and with analytic models derived from the linearized Reynolds equation for small [...]

New Capabilities for Verilog-A Implementations of Compact Device Models

Mierzwinski M., OHalloran P., Troyanovsky B., Mayaram K., Dutton R.W., Tiburon Design Automation, US

Acceptance of a model requires its availability in main-stream simulators, yet it can be difficult to get a new model into commercial simulators. In this paper we present simulation results using a compiled Verilog-A architecture [...]

Predicting the SOI History Effect Using Compact Models

Na M-H, Watts J.S., Nowak E.J., Williams R.Q., Clark W.F., IBM Corporation, US

A simple and effective compact model methodology that predicts the history effect in silicon-on-insulator (SOI) is discussed. In this study we employ three physical parameters to modify the body-potentials of SOI FETs in an inverter [...]

Improved Compact Model for Four-Terminal DG MOSFETs

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology, JP

Double-gate field-effect transistors are promising device structures which have excellent scalability. To evaluate merits of DG MODFETs, we developed a compact four-terminal DG MOSFET model by adopting the double charge-sheet model. In this presentation, we [...]

Keywords: compact model