compact model – Page 11 – TechConnect Briefs

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Zhou X., Chiah S.B., Lim K.Y., Nanyang Technological University, SG

This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), [...]

Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction

Chiah S.B., Zhou X., Lim K.Y., See A., Chan L., Nanyang Technological University, SG

This paper demonstrates a physically-based approach to parameter extraction of the compact Ids model we have developed for deep-submicron technology development. A two-iteration parameter-extraction scheme is described, which improves the previous one-iteration approach. Parameter calibration [...]

Compact Model for Manufacturing Design and Fluctuation Study

Lim K.Y., Zhou X., Chartered Semiconductor Manufacturing Ltd., SG

In this article, a physics based compact model [1, 2] has been used as a tool for manufacturing process variability study. Three critical end-of-line (EOL) measured electrical testing (ET) parameters, namely Vth, Ion and Ioff, [...]

How to Build an SOI MOSFET Compact Model without Violating the Laws of Physics

Watts J., IBM Microelectronics, US

An important application for partially depleted SOI is high performance microprocessors and other logic chips. In order to deliver market leading performance it is necessary for transistor design and circuit design to be done concurrently. [...]

Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers

Zhou X., Nanyang Technological University, SG

This paper describes the ideas and philosophy behind a new compact model (CM) for deep-submicron MOSFETs, called Xsim, which has been developed from scratch over the past few years. Similarities to and differences from existing [...]

Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application

Fung S., Su P., Hu C., IBM Microelectronics, US

The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and [...]

Keywords: compact model

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction

Compact Model for Manufacturing Design and Fluctuation Study

How to Build an SOI MOSFET Compact Model without Violating the Laws of Physics

Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers

Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application

Detailed Comparison of the SP2001, EKV, and BSIM3 Models

End Effects of Rare Gas Flow in Short Channels and in Squeezed-Film Dampers

A Compact Model for Flowrate and Pressure Computation in Micro-fluidic Devices

Compact Modeling and Circuit Impact of a Novel Frequency Dependence of Capacitance in RF MOSFETs