boron diffusion – TechConnect Briefs

Minimized atomistic model (MAM) of BmIn cluster and the effect of Ge pre-amorphization implant (Ge-PAI) on boron diffusion

Yoo J-H, Yoon K-S, Hwang C-O, Yoon K-S, Kim J-S, Won T., School of Engineering, National IT Research Center for Computational Electronics, Inha University, KR

In this paper, we report on our minimized atomistic model (MAM) composed of the evolution path from B2I to B3I for describing kinetic Monte Carlo (KMC) in boron diffusion. MAM, which is based on the [...]

KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects

Yoo J-H, Hwang C-O, Seo J., Kwon O., Won T., Inha University, KR

In this paper, we discuss a model for investigating the KMC parameters for interstitial and vacancy and we propose a novel atomistic model to explain the evolution of interstitial clusters during boron diffusion for kinetic [...]

Kinetic Monte Carlo Modeling of Boron Diffusion in Si Crystalline Materials

Seo J., Hwang C-O, Kwon O., Kim K., Won T., School of Engineering, Inha University, KR

In this paper, we report a lattice-free kinetic Monte Carlo (KMC) result of boron diffusion at low temperatures 450o and 550o with vacancy + interstitialcy mechanism or vacancy + kick-out one with dilute self-interstitials (I) [...]

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

Windl W., Stumpf R., Masquelier M., Bunea M., Dunham S.T., Motorola, US

First-principle calculations of formation and migration energies of dopant atoms and native defects in semiconductors are a very useful input to improve semiconductor process simulations One example of this is the widely accepted first-principles model [...]