bipolar transistor – TechConnect Briefs

A Physics Based Approach to Compact Modeling of Noise in Modern Bipolar Transistors

Niu G., Auburn University, US

A physics based approach to compact modeling of bipolar transistor noise is described. Frequency dependent intrinsic base current noise, its correlation to intrinsic collector current noise, avalanche of intrinsic collector current noise entering the collector-base [...]

Improved layout dependent modeling of the base resistance in advanced HBTs

Lehmann S., Schroter M., University of Technology Dresden, DE

Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation

Loechelt G.H., Sellers J., Morgan J., Azam M., ON Semiconductor, US

The optimization of bipolar transistors for high speed applications requires knowing the trade-off between several competing factors, including emitter-base junction charging time, base transit time, base-collector capacitance, high injection degradation, and collector debiasing [1]. Numerical [...]

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

Kunz V.D., de Groot C.H., Anteney I.M., Abdul-Rahim A.I., Hall S., Hemment P.L.F., Wang Y., Ashburn P., University of Southampton, UK

In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates [...]