analytical modeling – TechConnect Briefs

A Computationally Efficient Method for Analytical Calculation of Potentials in Undoped Symmetric DG SOI MOSFET

Cobianu O., Glesner M., Darmstadt University of Technology, DE

In order to build an analytical model of an undoped symmetric DG SOI MOSFET devices, an accurate but rather difficult method was used by S. Malobabic et.al. [2] in their papers that is based on [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs

Autran J-L, Munteanu D., Tintori O., Aubert M., Decarre E., CNRS, FR

An analytical subthreshold model of ultra-thin double-gate MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate DG devices (quantum confinement, thermionic current) and introduces two main [...]

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Autran J-L, Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T., CNRS, FR

A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

Voltage Current Curve of a PEM Fuel Cell

Kulikovsky A.A., Research Center - Juelich, DE

First we consider 1D problem of the cathode catalyst layer (CCL) performance. The general solution is presented and simple analytical formulas for CCL polarization voltage are obtained. Based on these formulas we build a simple [...]

Analytical Results for the Current-Voltage Characteristics of an SOI-MOSFET

Morris H.C., Cumberbatch E., Phillips T., Hinderberger B., Claremont Graduate University, US

Exact formulae for the current-voltage characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward [1,2]. A detailed comparison with test data is presented and [...]

Analytical Simulation of a 1D Single Crystal Silicon Electrostatic Micromirror

Camon H., Larnaudie F., Rivoirard F., Jammes B., LAAS/CNRS, FR

This paper is devoted to the study of the static and dynamic behavior of a 1D torsion single crystal silicon micro mirror. Our aim is to develop a parametric model allowing the use of single [...]