HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond
Miura-Mattausch M., Sadachika N., Miyake M., Navarro D., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Inagaki R., Furui Y., Hiroshima University, JP
HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an [...]