Zhou X. – Page 6 – TechConnect Briefs

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

Chiah S.B., Zhou X., Lim K.Y., Wang Y., See A., Chan L., Nanyang Technological University, SG

A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the [...]

Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET’s

Zhou X., Lim K.Y., Nanyang Technological University, SG

A simple, empirically-based method is developed for extraction of submicron surface-channel MOSFET’s effective channel length (Leff) with critical-dimension correction to poly-gate length (Lg) and correlation to metallurgical channel length (Lmet). A self-consistent compact model for [...]

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

Qian W., Zhou X., Wang Y., Lim K.Y., Nanyang Technological University, SG

In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with [...]

A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET’s Technology Development and Circuit Simulation

Zhou X., Lim K.Y., Nanyang Technological University, SG

This paper presents a novel approach to formulating compact I-V models for deep-submicron MOS technology development. The developed model is a one-region closed-form equation that resembles the same form as the long-channel one, which covers [...]

Modeling of Threshold Voltage with Reverse Short Channel Effect

Lim K.Y., Zhou X., Wang Y., Nanyang Technological University, SG

This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian [...]

A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling

Lim D., Lim K.Y., Zhou X., Lim D., Lim K.Y., Nanyang Technological University, SG

This paper presents a compact length-dependent saturation current (Idsat) model for deep-submicron MOSFETs based on accurate modeling of the threshold voltabe (Vth). The proposed unified model has considered all the important two-dimensional (2-D) short-channel effects, [...]