Zhang J. – Page 2 – TechConnect Briefs

Numerical evaluation of growth conditions of GaN-based LEDs in multiwafer MOCVD reactor

Yang L., Zhang J., Hu J., Shanghai University, CN

In this paper, numerical evaluation of growth conditions of GaN in multiwafer planetary MOCVD reactor was carried out. The growth of GaN films using TMGa as a precursor, hydrogen and nitrogen as carrier gas was [...]

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

Zhang J., Zhang L., He J., Zhang J., Zhang L., Zhou X., Zhou Z., Zhou X., Zhou Z., Peking University, CN

A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate from intrinsic to heavily doped channel with various structure parameter variations. The framework starts from one-dimension Poisson-Boltzmann’s equation. Based [...]

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

Zhou X., Zhou Z., Zhang J., Zhou X., Zhou Z., Lin X., He J., Peking University, CN

This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson’s equation for the heavily-doped region and lightly-doped region, respectively, and the analytic [...]

Analytic Modeling of BioFET as a pH Sensor

Song Y., Guan Y., Zhang J., Zhang X., He J., Zhang J., Zhang X., Lin X., Peking University, CN

In this paper, the analytic modeling of the BioFET as a pH sensor has been developed from the complete surface potential equation and channel expression. Combining the physical MOSFET theory with electrochemistry of the electrolyte, [...]

A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs

Lin S., Zhou X., See G.H., Zhu G., Wei C., Zhang J., Chen Z., Nanyang Technological University, SG

Gate-All-Around (GAA), or surrounding-gate, MOSFET is one of the most promising structures beyond bulk CMOS. In this paper, we present a simple, accurate C-V model of undoped silicon nanowire MOSFETs. Different with other models, proposed [...]

Compact Model Application to Statistical/Probabilistic Technology Variations

Zhou X., Zhu G., Srikanth M., Selvakumar R., Yan Y., Chandra W., Zhang J., Lin S., Wei C., Chen Z., Nanyang Technological University, SG

ULSI systems are designed by electronic design automation (EDA) tools with performance figures-of-merit (FOM) measured by SPICE circuit simulation, in which nonlinear transistors are modeled by the compact model (CM) with its nominal set of [...]

Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics

Song Y., Zhang J., Zhang L.N., Zhang J., Zhang L.N., Zhuang H., Che Y.C., He J., Chan M., Peking University, CN

A computation efficient yet accurate surface potential-based analytic model for the symmetric double-gate MOSFETs is proposed to simulate double-gate device current-voltage characteristics in this paper. This model consists of a surface potential versus voltage input [...]

Analytic MOSFET Surface Potential Model with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion Effects

Song Y., He J., Zhang J., Zhang L.N., Zhang J., Zhang L.N., Peking University, CN

An analytic MOSFET surface potential model with inclusion of the poly-gate accumulation, depletion, and inversion effects is derived from the basic MOS device physics and its solution result is also discussed in this paper. By [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

Biofunctionalization of laser-ablated gold nanoparticles

Riabinina D., Zhang J., Zhang T., Zhang J., Zhang T., Chaker M., Ma D., Tijssen P., Universite du Quebec, CA

For the first time, we investigated the biofunctional activity of gold nanoparticles prepared by nanosecond pulsed laser ablation in liquid media. This method allows the fabrication of gold nanoparticles surrounded by a metastable gold oxide [...]