Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation
Zhang C., Wang W., Liu Y., Ye Y., Zhao W., He J., Wu W., Peking University Shenzhen SOC Key Laboratory, CN
A compact Negative Bias Temperature Instability (NBTI) model, which is based on a novel Reaction-Trapping (R-T) theory, is proposed to predict the static and dynamic NBTI degradation in nanoscale FinFET reliability simulation. This R-T theory [...]