In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift in the semi-log plotted transfer characteristics, while interface trap influences subthreshold slope of the device. The above theory is verified by ISE-Dessis simulation. The results demonstrate that this method is effective and accurate for extracting parameters of devices with gate length less than 1μm.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 180 - 183
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems