Wei C.Q. – TechConnect Briefs

Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model

Zhou X., Zhu G.J., Srikanth M.K., Lin S-H, Chen Z.H., Zhang J.B., Wei C.Q., Yan Y.F., Selvakumar R., Nanyang Technological University, SG

This paper presents benchmark tests of the unified compact model (Xsim) for double-gate (DG) and gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs, which has been developed over the years with the unified regional modeling (URM) approach. The [...]

1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion

Wei C.Q., Xiong Y.Z., Zhou X., Nanyang Technological University, SG

1/f noise model of long channel lightly-doped FinFET biased in weak inversion has been described using Hooge’s theory. From the drain current equation and the channel conductance expression, the total number of carriers under the [...]

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

Zhu G.J., Zhou X., See G.H., Lin S-H, Wei C.Q., Zhang J.B., Nanyang Technological University, SG

A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact [...]

A Technique for Constructing RTS Noise Model Based on Statistical Analysis

Wei C.Q., Xiong Y.Z., Zhou X., Nanyang Technological University, SG

In this paper, a technique for constructing the RTS noise model based on the statistical analysis of the noise data obtained from the Schottky diode under different biases is introduced. The three RTS parameters: pulse [...]

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

See G.H., Zhou X., Chandrasekaran K., Chiah S.B., Zhu G.J., Zhu Z.M., Lim G.H., Wei C.Q., Lin S-H, Zhu G.J., Zhu Z.M., Nanyang Technological University, SG

One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The [...]

Unified Compact Model for Generic Double-Gate MOSFETs

Zhou X., See G.H., Zhu G.J., Zhu Z.M., Chandrasekaran K., Zhu G.J., Zhu Z.M., Rustagi S.C., Lin S-H, Wei C.Q., Lim G.H., Nanyang Technological University, SG

A generic double-gate (DG) MOSFET follows a generalized (input) voltage equation from the first integral of Poisson equation and Gauss' law at the two gates, which is implicit and, in general, non-integrable when the channel [...]