Vasileska D. – TechConnect Briefs

Drift Velocity Calculation in Si Using an Analytical Model for the Phonon Dispersion

Gada M., Vasileska D., Raleva K., Goodnick S.M., Arizona State University, US

It is well known that crystalline silicon is the material of choice for fabrication of integrated circuits because silicon wafers are cheap and silicon dioxide is abundant in nature. Properties of the crystalline silicon have [...]

Importance of the Collisional Broadening of the States across MOSFET Technology Generations

Kannan G., Vasileska D., Arizona State University, US

There are two assumptions made in the derivation of the Fermi’s Golden Rule: (1) it is assumed that the scattering is infrequent which allows us to impose the long time limit and arrive at the [...]

Impact of Channel Length and Gate Width of a N-MOSFET Device on the Threshold Voltage and its Fluctuations in Presence of Random Channel Dopants and Random Interface Trap: A 3D Ensemble Monte Carlo Stud

Ashraf N., Joshi S., Vasileska D., ASU, US

Previously we have reported threshold voltage fluctuations caused by presence of random distribution of dopant ions in the channel region of a 45 nm n-MOSFET and random single interface trap positioned from source to drain [...]

Current Degradation due to electromechanical coupling in GaN HEMT’s

Padmanabhan B., Vasileska D., Goodnick S.M., Arizona State University, US

The major reliability concern in GaN HEMT technology is the current degradation due to electromechanical coupling.Electromechanical coupling is the change in the piezoelectric polarization charge in the device with the application of bias. A theoretical [...]

The role of Electromechanical coupling in AlGaN/AlN/GaN HEMTs

Padmanabhan B., Vasileska D., Goodnick S.M., Arizona State University, US

we present simulation results for GaN HEMTs in which the structure has additional AlN spacer layer thus completely modifying the electromechanical coupling approach.

Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

Ashraf N., Vasileska D., Arizona State University, US

Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.

Monte Carlo Simulation of Impact of Random Telegraph Noise in 45 nm MOSFET Due to Coupled Effects of Random Interface and Oxide Traps With Random Channel Dopant Distributions

Ashraf N.S., Vasileska D., Ma Z., Arizona State University, US

This paper presents a 3-D Ensemble Monte Carlo ( EMC ) based simulation for 45 nm gate length MOSFET to account for the fluctuations in drain current (saturation) and threshold voltage as causes of reliability [...]

Self – Heating Effects in Nanowire Transistors

Hossain A., Raleva K., Vasileska D., Goodnick S.M., Arizona State University, US

We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic [...]

First self-consistent thermal electron- phonon simulator

Vasileska D., Raleva K., Goodnick S.M., Arizona State University, US

We have developed the first self-consistent thermal electron-phonon simulator which solves the Boltzmann transport equation for the electrons and the energy balance equations for phonons, and as such allows us to make realistic estimates on [...]

Optimization and Examination of Device Characteristics Due to Process Variation in 10 nm FinFET Using Fully Self-Consistent Quantum Mechanical Simulator

Khan H., Mamaluy D., Vasileska D., Arizona State University, US

We use Contact Block Reduction (CBR)method to investigate the critical issues relating optimization of device performance in 10 nm FinFET operating in ballistic regime. The goal of this work is to achieve the desired values [...]