Thoma R. – TechConnect Briefs

Substrate Current Simulations at Elevated Temperatures

Lyumkis E., Mickevicius R., Polsky B., Loechelt G., Zlotnicka A., Thoma R., Integrated Systems Engineering, Inc., US

We report results of hydrodynamic simulations and measurements of substrate currents in submicron MOSFET. Both simulations and measurements show anomalous dependence of the substrate current on lattice temperature, which is consistent with previously published experimental [...]

3-D Simulation and Modeling of Signal Isolation in RF/IF Circuits

Bharatan S., Welch P., To K.H., Thoma R., Huang M., Motorola, Digital DNA Laboratories, US

In this paper, we present a practical methodolgy for the 3-dimensional simulation of signal isolation structures along with comparison to measurements made on test structures. We also describe the extraction of a scalable compact model [...]

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Sudhama C., Spulber O., McAndrew C., Thoma R., Motorola SPS, US

Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions [...]

Robust Ion-Implantation Process Design through Statistical Analysis

Sudhama C., Thoma R., Morris M., Christiansen J., Lim I-S., Motorola Digital DNA Labs, US

In this work, for the first time, we present a TCAD methodology to rigorously account for statistical variations due to these random process errors (inherent in all semiconductor processes), and thereby design a robust ion-implantation [...]

Concurrent Process, Device and Integrated Circuit Development by Predictive Engineering for Smart Power Technologies

Bafleur M., Dinh T., Park H., Thoma R., Zirkle T., Wild A., LAAS/CNRS, FR

Predictive TCAD has been shown to be a powerful tool for the development of low voltage CMOS and VLSI memory technology development [1], [2] in which the main features of advanced p-channel and n-channel MOS [...]