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HomeAuthorsLin S-H

Authors: Lin S-H

Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model

Zhou X., Zhu G.J., Srikanth M.K., Lin S-H, Chen Z.H., Zhang J.B., Wei C.Q., Yan Y.F., Selvakumar R., Nanyang Technological University, SG
This paper presents benchmark tests of the unified compact model (Xsim) for double-gate (DG) and gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs, which has been developed over the years with the unified regional modeling (URM) approach. The [...]

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

Zhu G.J., Zhou X., See G.H., Lin S-H, Wei C.Q., Zhang J.B., Nanyang Technological University, SG
A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact [...]

Ultrasensitive Protein Detection Using an Au/ZnO SPR-Based Biosensor

Chang C-C, Lin C-W, Lin S-H, Chiu N.-F., Lin C-W, Lin S-H, National Taiwan University, TW
In this study, we demonstrated that the Au/ZnO nanocomposite films could be effectively used to enhance the performance of SPR for the detection of tumor marker. Carbohydrate antigen 15.3 (CA15.3) tumor marker for breast cancer [...]

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

See G.H., Zhou X., Chandrasekaran K., Chiah S.B., Zhu G.J., Zhu Z.M., Lim G.H., Wei C.Q., Lin S-H, Zhu G.J., Zhu Z.M., Nanyang Technological University, SG
One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The [...]

Unified Compact Model for Generic Double-Gate MOSFETs

Zhou X., See G.H., Zhu G.J., Zhu Z.M., Chandrasekaran K., Zhu G.J., Zhu Z.M., Rustagi S.C., Lin S-H, Wei C.Q., Lim G.H., Nanyang Technological University, SG
A generic double-gate (DG) MOSFET follows a generalized (input) voltage equation from the first integral of Poisson equation and Gauss' law at the two gates, which is implicit and, in general, non-integrable when the channel [...]

Synthesis and Characterization of Spiral Carbon Nanofibers Containing Pd Metal Cluster by using Pd2(dba)3 as Catalyst

Su C-J, Hsu L-S, Wu T-W., Liu C-J, Lin S-H, Chung Shan Medical University, TW
The spiral carbon nanofibers consisting of Pd metal cluster were grown by the Pd2(dba)3-catalyzed decomposition of gaseous acetylene on molecular sieves (Linde 13X) support. The microstructure and composition of the spiral carbon nanofibers were characterized [...]

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3D Printing Advanced Manufacturing Advanced Materials for Engineering Applications AI Innovations Biofuels & Bioproducts Biomaterials Cancer Nanotechnology Carbon Capture & Utilization Carbon Nano Structures & Devices Catalysis Chemical, Physical & Bio-Sensors Coatings, Surfaces & Membranes Compact Modeling Composite Materials Diagnostics & Bioimaging Energy Storage Environmental Health & Safety of Nanomaterials Fuel cells & Hydrogen Graphene & 2D-Materials Informatics, Modeling & Simulation Inkjet Design, Materials & Fabrication Materials Characterization & Imaging Materials for Drug & Gene Delivery Materials for Oil & Gas Materials for Sustainable Building MEMS & NEMS Devices, Modeling & Applications Micro & Bio Fluidics, Lab-on-Chip Modeling & Simulation of Microsystems Nano & Microfibrillated Cellulose Nanoelectronics Nanoparticle Synthesis & Applications Personal & Home Care, Food & Agriculture Photonic Materials & Devices Printed & Flexible Electronics Sensors - Chemical, Physical & Bio Solar Technologies Sustainable Materials Water Technologies WCM - Compact Modeling
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