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HomeAuthorsLin C.H.

Authors: Lin C.H.

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK
This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Xi X., He J., Heyderi B., Dunga M., Lin C.H., Heyderi B., Wan H., Chan M., Niknejad A.M., Hu C., University of California at Berkeley, US
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based [...]

Design and Manufacturing of a Miniaturized 2.45GHz Bulk Acoustic Filter by High Aspect Ratio Etching Process

Lin C.H., Chen H-R, Du C-H, Fang W., National TsingHua University, TW
A 2.45GHz filter is fabricated by thin film bulk acoustic wave resonator (FBAR) technology. Especially, it is designed to minimize die size and to simplify fabrication process simultaneously by using inductive coupling plasma etching. The [...]

Compact Modeling for RF and Microwave Integrated Circuits

Niknejad A.M., Chan M., Hu C., Brodersen B., Xi J., He J., Emami S., Doan C., Cao Y., Su P., Wan H., Dunga M., Lin C.H., University of California at Berkeley, US
Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK
This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]

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