Li B. – TechConnect Briefs

Highly Organized Two and Three Dimensional Singlewalled Carbon Nanotubes-Polymer Hybrid Architectures

Li B., Hahm M.G., Kim Y.L., Kar S., Jung Y.J., Northeastern University, US

We present a new class of highly organized SWCNTs network-polymer hybrid structures, by incorporating horizontally and vertically aligned SWCNTs in desired locations, orientations and dimensions on/inside flexible polymer matrices forming mechanically and electrically robust unique [...]

Compact Modeling of Dynamic Threshold Voltage of FinFET High K Gate Stack and Application in Circuit Simulation

He F., Ma C., Li B., Lin X., Zhang L., Zhang X., Zhang L., Zhang X., Lin X., SZPKU, CN

Compact modeling study of dynamic threshold voltage of FinFET high K gate stack is proposed in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this [...]

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X., Peking University, CN

A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. [...]

Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric Double-Gate MOSFETs and Its Continuous Solution

He J., Chen Y., Li B., Wei Y., Chan M., Peking University, CN

Surface potential is one key variable in DG MOSFET compact modeling. A complete surface potential versus voltage equation and its continuous solution from the accumulation to strong inversion region are presented in this paper for [...]

Diode Parameter Extraction by a Linear Cofactor Difference Operation Method

Ma C., Li B., Liu F., Chen Y., Zhang L., Zhang X., Liu F., Feng J., He J., Zhang L., Zhang X., Peking University, CN

The direct extraction of the key static parameters of a general diode by the new method named Linear Cofactor Difference Operator (LCDO) method has been carried out in this paper. From the developed LCDO method, [...]

An Approximate Explicit Solution to General Diode Equation

He J., Tao Y., Yang C., Feng M., Li B., Bian W., Chen Y., Peking University, CN

an approximate explicit solution for a normalized diode has been developed in this paper. The accuracy of the diode current calculation and its derivative prediction has also been verified compared with the result of the [...]

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

He J., Bian W., Tao Y., Li B., Chen Y., Peking University, CN

A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete [...]

Development of Self-Assembled Robust Microvalves with Electroform Fabricated Nano-Structured Nickel

Li B., Chen Q., University of Central Florida, US

The microvalve for the hydraulic actuatora need large flow rate (>10 cc/second, displacement related), high-pressure support ability (>10 MPa) and a high operational frequency (>10 kHz) [1, 2]. Microvalves can match the piezoelectric material’s frequency, [...]

Direct Scanning Laser Writing of 3D Multilayer Microstructures

Yu H., Li B., Zhang X., Boston University, US

Material processing with lasers is an expanding field since it not only makes manufacturing cheaper, faster, cleaner, and more accurate but also opens up entirely new technologies and manufacturing methods that are simply not available [...]

Resonant Frequency Shift of Torsional Acutators due to Electrostatic Force

Xiao Z., Sun Y., Li B., Lee S., Sidhu K.S., Chin K.K., Farmer K.R., New Jersey Institute of Technology, US

We have investigated the effect of natural frequency shift in single-crystal silicon, rectangular, electrostatic torsion actuators due to the electrostatic force. The electrostatic actuator was fabricated by using ultra-thin silicon wafer, SU-8 thermal compression bonding, [...]