Kwon O. – TechConnect Briefs

KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects

Yoo J-H, Hwang C-O, Seo J., Kwon O., Won T., Inha University, KR

In this paper, we discuss a model for investigating the KMC parameters for interstitial and vacancy and we propose a novel atomistic model to explain the evolution of interstitial clusters during boron diffusion for kinetic [...]

Topography Simulation for Structural Analysis Using Cell Advancing Method

Lee J-G, Yoon S., Kwon O., Won T., Inha University, KR

We propose an cell advancing method which is different but stems from the traditional cell method for accurate topography simulation. It is considered that the cell advancing method is very suitable to figure out the [...]

Kinetic Monte Carlo Modeling of Boron Diffusion in Si Crystalline Materials

Seo J., Hwang C-O, Kwon O., Kim K., Won T., School of Engineering, Inha University, KR

In this paper, we report a lattice-free kinetic Monte Carlo (KMC) result of boron diffusion at low temperatures 450o and 550o with vacancy + interstitialcy mechanism or vacancy + kick-out one with dilute self-interstitials (I) [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Kwon O., Seo J., Won T., Inha University, KR

A two-dimensional quantum mechanical modeling has been performed to simulate a nano-scale FinFET by obtaining the self-consistent solution of coupled Poisson and Schrödinger equations. Calculated current-voltage (I-V) curves are carefully compared with experimental data to [...]

Molecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics [...]

Atomistic Process and Simulation in the Regime of sub-50nm Gate Length

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report an atomistic simulation approach for sub-50nm gate length FETs. The proposed atomistic approach consists of the coupling the molecular dynamics (MD) simulations of the collision cascades for ion implantation process [...]

Modeling of Deposition Process by Level Set Method

Jung H., Kwon O., Yoon S., Won T., Inha University, KR

In this paper, we report a novel method for effectively reducing the amount of calculation for a deposition rate at a specific level-set node. The proposed algorithm makes it possible to reduce the number of [...]

Modeling and Simulation of 3D Structures for Gigabit DRAM

Kwon O., Yoon S., Ban Y., Won T., Inha University, KR

In this paper, we present a 3D topography simulator, so-called 3D-SURFILER(SURface proFILER), to model a complicated 3D structure on the substrate for gigabit DRAMs. The 3D-SURFILER comprises a deposition and etching simulator employing a cell [...]

A Methodology for Modeling a Complex Geometry on Wafer from a Layout Data

Yoon S., Kwon O., Won T., Inha University, KR

This paper reports a novel methodology and its application to the modeling of a complex 3D geometry on wafer from a layout data. Our modeling method comprises the steps of: drawing a mask layout; transforming [...]

Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method

Ban Y., Yoon S., Kwon O., Won T., Inha University, KR

In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and an ultra-low energy (sub 2keV) Monte-Carlo ion implantation model are suggested. The dopant and damage profiles show [...]