The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs
Sadachika N., Yusoff M.Md., Uetsuji Y., Bhuyan M.H., Kitamaru D., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Weiss L., Feldmann U., Baba S., Graduate School of Advanced Sciences of Matter, Hiroshima University, JP
Fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is developed. HiSIM-SOI solves surface potentials at all three SOI-surfaces along the depth direction self-consistently. Besides comparison to measured I-V characteristics, the model is verified with 1/f noise [...]