Galup-Montoro C. – TechConnect Briefs

MOSFET threshold voltage: definition, extraction, and applications

Machado M.B., Siebel O., Schneider M.C., Galup-Montoro C., Federal University of Santa Catarina, BR

The threshold voltage VT is a fundamental parameter in the characterization of MOS transistors and should be used, whatever is the adopted model for the transistor. The classical definition of threshold: phis = 2phiF +V [...]

A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range

Klimach H., Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

Mismatch is the denomination of time-independent variations between identically designed components. In analog circuits, the spread in the dc characteristics of supposedly matched transistors results in inaccurate or even anomalous circuit behavior. Also, for digital [...]

Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Universidade Federal da Bahia - UFBA, BR

The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined [...]

PTAT voltage generator based on an MOS voltage divider

Rossi C., Galup-Montoro C., Schneider M.C., Universidad de la Republica, UY

Little has been published on the use of charge-based compact models as tools for variable operating temperature design. We analyzed an MOS voltage divider applying the ACM model obtaining an equation relating the voltage at [...]

Consistency of compact MOSFET models with the Pao-Sah formulation: consequences for small-signal analysis

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Federal University of Santa Catarina, BR

Compact models for the MOSFET are based on the decomposition of the two-dimensional problem into two one-dimensional problems. Since a compact MOSFET model core consists of an input voltage equation, and an output current equation, [...]

Charge-Based Formulation of Thermal Noise in Short-Channel MOS Transistors

Paim V.C., Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

In this communication we present a charge-based formulation for the thermal noise in short-channel MOS transistors. We arrive at a closed expression for the channel noise including velocity saturation for all the operating regions of [...]

Interrelations between Threshold Voltage Definitions and Extraction Methods

Schneider M.C., Galup-Montoro C., Machado M.B., Cunha A.I.A., Federal University of Santa Catarina, BR

This paper presents a brief discussion on the main MOSFET threshold voltage definitions available in the literature as well as on associated extraction methodologies. In order to compare these definitions and methodologies, we take advantage [...]

Symbolic charge-based MOSFET model

Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

The new generation of compact MOSFET models provides accurate current, charge, capacitance and noise characteristics as numerical outputs of a rather complicated set of internal equations specific to each model. Clearly, numerical circuit simulation is [...]

Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Gouveia-Filho O.C., Universidade Federal de Santa Catarina, BR

This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We [...]

Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the threshold voltage. The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical [...]