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HomeAuthorsChen T.P.

Authors: Chen T.P.

Yellow electroluminescence from sputtering synthesized aluminum nitride nanocomposite thin film containing aluminum nanocrystals

Yang M., Chen T.P., Liu Y., Wong J.I., Nanyang Technological University, SG
In this work, visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio frequency sputtering technique is reported. The yellow EL shows a spectrum peaked at 565 nm. [...]

Instability in flatband votlage of SiO2 embedded with silicon nanocrystals

Ng C.Y., Wong J.I., Yang M., Chen T.P., Nanyang Technological University, SG
In this work, the stability of the flatband voltage due to the Si-ions implantation into the SiO2 and subsequent annealing is being studied. There are lack of study on the impact of different annealing temperature [...]

Static dielectric constant of SiO2 embedded with silicon nanocrystals

Ng C.Y., Yang M., Wong J.I., Chen T.P., Nanyang Technological University, SG
The static dielectric constant of isolated silicon nanocrystal (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the Stopping [...]

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

Liu Y., Chen T.P., Ng C.Y., Ding L., Nanyang Technological University, SG
In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is [...]

XPS Studies of Silicon Nanoclusters/Nanocrystals Embedded in SiO2 Matrix

Chen T.P., Liu Y., Nanyang Technological University, SG
In this work, X-ray photoelectron spectroscopy (XPS) is used to study the annealing effects on the chemical structures, depth profiling of the chemical states and core-level shifts of the Si nanocrystals in the Si-implanted SiO2 [...]

Charge Trapping and Charge Decay in Silicon Nanocrystals

Ng C.Y., Ding L., Chen T.P., Nanyang Technological University, SG
For applications of silicon nanocrystals in memory device, it is necessary to understand the discharging behaviors of the nanocrystals as the data endurance in memory and decay constant are important parameters to be measured. In [...]

Optical Properties of Silicon Nanocrystals Embedded in SiO2 Matrix

Ding L., Chen T.P., Liu Y., Nanyang Technological University, SG
In this work, spectroscopic ellipsometry (SE), which is a nondestructive method, is employed to determine the optical constants (refractive index and extinction coefficient) and thus the dielectric functions of the isolated nc-Si with a mean [...]

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