Motorola, Inc. – TechConnect Briefs

Convergence Issues in Ab-initio Transport Calculation through Oxide Barriers and Molecules

Fonseca L.R.C., Demkov A.A., Motorola, Inc., US

Ab-initio calculations of transport through nanometer scale structures, such as individual atoms or molecules and ultra-thin oxide barriers directly link atomic structure and chemistry, which are difficult to probe, to transport properties, which are easier [...]

First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures

Zhang X., Fonseca L.R.C., Demkov A.A., Motorola, Inc., US

We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method [...]

Multiscale Modeling of Stress-Mediated Diffusion in Silicon, Ab Initio to Continuum

Windl W., Laudon M., Daw M.S., Carlson N.N., Masquelier M.P., Motorola, Inc., US

The introduction of new ‘back end’ materials, as well as the further scaling of silicon device dimensions, has raised the level of stress in dvice structures. Current engineering simulations of diffusion neglect the direct effect [...]

Living in an Expanding TCAD Space

Borucki L.J., Motorola, Inc., US

A substantial number of important industrial modeling and simulation problems lie outside of the scope of commercial TCAD (Technology Computer-Aided Design) software.The tools needed to solve such problems include a good PDE (Partial Differential Equation) [...]

Modeling and Characterization of an Integrated FET Accelerometer

Kniffin M.L., Wiegele T.G., Masquelier M.P., Fu H., Whitfield J., Motorola, Inc., US

The GFET accelerometer is an integrated inertial sensor based on a movable-gate field effect transistor. The complexity of the transduction principle and the tight tolerances associated with its manufacture necessitated a large range of simulation [...]

A Physics-Based Characterized Model for an Ultrafast Planar Rectifier

Hossain Z., Fragale W., Simpson W., Dashney G., Motorola, Inc., US

This paper presents a characterized nodel for an ultrafast-recovery (UFR) rectifier based on the manufacturing processes and device structural geometry. The accuray of the developed model depends upon the proper selection of physical models and [...]

1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET

Fu H., Kniffin M.L., Watanabe G., Masquelier M.P., Whitfield J., Motorola, Inc., US

This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion [...]