The GFET accelerometer is an integrated inertial sensor based on a movable-gate field effect transistor. The complexity of the transduction principle and the tight tolerances associated with its manufacture necessitated a large range of simulation and modeling techniques in order to predict its performance, characterize its behavior and diagnose processing issues. These techniques included circuitequivalent models, finite element models, compact models and ane tical models. This collection of modeling technique., enabled the prediction of system-level performance and the successful development of an innovative accelerometer design.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 546 - 551
Industry sector: Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications