The introduction of new ‘back end’ materials, as well as the further scaling of silicon device dimensions, has raised the level of stress in dvice structures. Current engineering simulations of diffusion neglect the direct effect of stress on diffusivity. In this paper, we demonstrate for the first time the development of a complete methodology to simulate the effects of general anisotropic non-uniform stress on diffusion of B in Si. The macroscopic diffusion equation is derived from microscopic transition state theory, relating the diffusivity to the microscopic jump parameters. The required microscopic parameters are calculated from first principles. Stress in gate stack materials is measured as a funciton of temperature and used to develop a stress-prediction methodology. ALl these numbers are implemented in a continuum model and used to examine diffusion in a complex sress field.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 15 - 19
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems