Hong Kong University of Science and Technology

Reliability-Aware Device Modeling and Implications on Circuit Aging Simulations

Zhang L., Ma C., Chan M., Hong Kong University of Science and Technology, HK

Device reliability and circuit aging are becoming key design concerns with advanced CMOS technologies. In the traditional way, a reliability model describing the device parameter shifts in the time domain is independent of a device [...]

From nanopores to nanoshells: The transformation of MCM-41 into ultrathin wall, hollow silica nanospheres

Ho W.Y., Yeung K.L., Hong Kong University of Science and Technology, HK

This work describes the preparation of ultra-small and ultra-thin hollow silica nanospheres from mesoporous MCM-41. The partially converted MCM-41, which retained the silhouette of the original MCM-41 particle, but is severely riddled with holes from [...]

Immobilization of biomolecules in nano-bottles

Dong O., Yeung K.L., Hong Kong University of Science and Technology, HK

This work reports the fabrication of nano-bottles for the containment of biomolecules on a surface of the substrate. Nano-bottles of different sizes from 10 nm to 200 nm were prepared by using nanotextured polymers formed [...]

On the Modeling of the Current-Voltage Characteristics of a Symmetrical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with an Undoped Body

Wong M., Shi X., Hong Kong University of Science and Technology, HK

Three general classes of solutions are needed to model an arbitrary double-gate (DG) metal-oxide-semiconductor (MOS) capacitor with arbitrary bias conditions. The “zero-field” (F0) and the “zero-potential” (P0) solution regimes are separated by the “zero-field and [...]

Zeolite Micropattern for Biological Applications

Wong L.W., Sun W., Lam K.F., Yeung K.L., Hong Kong University of Science and Technology, HK

A facile method was established using composition-gradient pattern on zeolite surface to guide the deposition and formation of chemical and biomolecular patterns .The goal is to achieve well-defined spatial patterns of bioactive molecules of precise [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

Zeolite Membrane Microreactors for Fine Chemical Synthesis

Zhang X., Lai S.M., Lam K.F., Yeung K.L., Martin-Aranda R., Hong Kong University of Science and Technology, CN

The performance of a membrane microreactor was tested and compared with that of microreactor, packed bed reactor (PBR) and packed bed membrane reactor (PBMR) for the Knoevenagel condensation reaction of benzaldehyde and ethyl cyanoacetate to [...]

Gold Removal and Recovery using Mesoporous Silica Adsorbents

Lam K.F., Yeung K.L., McKay G., Hong Kong University of Science and Technology, CN

This work investigates the selective removal of dissolved metal ions from aqueous solutions using MCM-41 adsorbents grafted with different chemical moieties. A systematic study was conducted to understand the adsorption mechanisms, in order to better [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

Engineering BSIM for the Nano-Technology Era and Beyond

Chan M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents the current status of the forth generation BSIM model and issues of modeling CMOS based devices with nanometer dimensions. Due to the divergence of device structures in sub-0.1 m gate length, it [...]