Arizona State University – Page 6

Quantum Effects in SOI Devices

Ahmed S.S., Akis R., Vasileska D., Arizona State University, US

Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide [...]

Self-consistent Modeling of Open Quantum Devices

Akis R., Shifren L., Ferry D.K., Arizona State University, US

In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

3D Biconjugate Gradient-Multi Grid Coupling Schemes for Field Equations in Semiconductor Device Simulation

Ayubi-Moak J., Wigger S., Goodnick S.M., Saraniti M., Arizona State University, US

A significant portion of the time required for simulating full three-dimensional (3D) charge transport in semiconductor devices using particle-based methods is spent solving the necessary field equations. Two highly effective, iterative techniques available for solving [...]

The Quantum-Point-Contact Spin Filter

Gilbert M.J., Bird J.P., Arizona State University, US

We describe an electron filter that exploits the known transmission properties of quantum point contacts to allow local and tunable control of the spin polarization in a semiconductor. When properly configured, the conductance of this [...]

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Shifren L., Akis R., Ferry D.K., Arizona State University, US

We utilize an effective potential to reproduce Bohm (quantum) trajectory behavior using purely classical trajectories. The effective potential is a novel method for including certain quantum phenomena into classical simulations by projecting the non-zero dimensions [...]

Efficient Poisson Equation Solvers for Large Scale 3D Simulations

Speyer G., Vasileska D., Goodnick S.M., Arizona State University, US

Self-consistent semiconductor device modeling requires repeated solution of the 2D or 3D Poisson equation that describes the potential profile of the device for a given charge distribution. As a result, efficient methods for the solution [...]

Discrete Impurity Effects in Silicon Quantom Dots

Milicic S.N., Vasileska D., Akis R., Gunther A., Goodnick S.M., Arizona State University, US

We have developed efficient self-consistent 3D Schrodinger-Poisson solver to model the energy level spectrum in silicon quantum dots. We find that the energy level spectrum in the dot can be easily tuned by varying the [...]

Hybrid CA/Monte Carlo Modeling of Charge Transport in Semiconductors

Saraniti M., Goodnick S.M., Wigger S.J., Arizona State University, US

We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled [...]

Ensemble Monte Carlo Simulation of Raman Scattering in an AlxGa1-xAs System to Determine the Relative Strength of the Polar Optical Modes

Shifren L., Ferry D.K., Arizona State University, US

A Monte Carlo simulation is used to study Raman scattering and the relative strengths of the polar optical modes in an AlxGa1-xAs system. The dual polar optical modes in the system are incorporated by including [...]

Self-Consistent Calculations of Spatial Electron Densities in Quantum Dots Using a Coupled Recursive Green’s Function and Poisson Solver

Badrieh F., Ferry D.K., Arizona State University, US

We are utilizing the Recursive Green's function method to calculate the conductance in quantum dots as a function of Fermi energy, magnetic field and random potentials. We have extended the use of the method to [...]