KR – Page 59 – TechConnect Briefs

Systematic Global Calibration of a Process Simulator

Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Kong J-T., Lee J-H., Lee S-W., Kim K-D., Kim Y-W., Baek D-H., Samsung Electronics Co.Ltd., KR

This paper proposes a novel methodology of systematic global calibration of a process simulator and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the whole [...]

Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method

Ban Y., Yoon S., Kwon O., Won T., Inha University, KR

In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and an ultra-low energy (sub 2keV) Monte-Carlo ion implantation model are suggested. The dopant and damage profiles show [...]

Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon

Son M-S., Hwang H-J., Chung-Ang University, KR

In this work, we presents a newly proposed and enhanced damage model for the accurate prediction of both as-implanted impurity and point defect profiles in Monte Carlo simulation of ion implantation in (100) crystalline silicon. [...]

An Integrated Pressure Sensor with High Performance

Lee B.N., Kim K.N., Park H.D., Shin S-M, Korea Electronics Technology Institute, KR

A bipolar integrated pressure sensor had been designed and simulated. The ion-implanted resistors with temperature coeffcient of 1700pm/?C and 4700ppm/?C were used for calibration and temperature compensation. Ion-implanted resistors are simultaneouslv fabricated with base and [...]

Analysis and Characterization of Laterally Induced Electrostatic Repulsive Forces

Lee K.B., Cho Y-H, Korea Advanced Institute of Science and Technology, KR

We analyze and characterize the laterally induced electrostatic repulsive force generated by the in-plane asymmetry of electrostatic field. Basic concept of the electrostatic repulsive actuation is presented. Fundamental nature of the repulsive force has been [...]