A bipolar integrated pressure sensor had been designed and simulated. The ion-implanted resistors with temperature coeffcient of 1700pm/?C and 4700ppm/?C were used for calibration and temperature compensation. Ion-implanted resistors are simultaneouslv fabricated with base and piezoresistors. Simulation results of designed pressure sensor showed that maximum stress was l:90kPa and maximum deflection was 4.95x lO,m. The pressure sensitivitv was 240V/V.kPa. Simulation results of calibrated and temperature compensated circuits showed that the offset voltage was 0.4V at 10kPa and full scale span was 4.6:V at llkPa. The temperature coefficient of full scale span was 46 ppm/?C at the temperature range of -10 to 70oC.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 575 - 579
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications