FR – Page 32 – TechConnect Briefs

Electro-Thermal Modeling: Design Tool for the Conception of a Low Power SnO2 Gas Sensor

Astié S., Gué A.M., Scheid E., Guillemet J.P., LAAS/CNRS, FR

The sensor's operating principle consists in measuring the resistance variations of a thin semiconductive layer heated between 250 and 450?C as a function of the nature and quantity of the molecules adsorbed on its surface. [...]

Concurrent Process, Device and Integrated Circuit Development by Predictive Engineering for Smart Power Technologies

Bafleur M., Dinh T., Park H., Thoma R., Zirkle T., Wild A., LAAS/CNRS, FR

Predictive TCAD has been shown to be a powerful tool for the development of low voltage CMOS and VLSI memory technology development [1], [2] in which the main features of advanced p-channel and n-channel MOS [...]

Energy-Based Solution Method for the Global Behavior of Diaphragms Under Pneumatic and Electrostatic Pressure

Francais O., Dufour I., LISiR-URA-CNRS, FR

In this paper, an approximate analytical solution is presented for the diaphragm's deflection based on energ minimization. through the use of a polynomial solution technique. Thanks to this method. we obtain not onlY the center [...]

Modeling and Simulation of a Stiffness-Controlled Micro-Bridge Resonator

Verjus F., Bourouina T., Belhaire E., Mauduit N., Bosseboeuf A., IEF-CNRS, FR

This paper deals with the modelin and simulation of electrical stiffness control of a micro-bridge. Stiffness variations are obtained by compressive stresses that result from Joule heating. The micro-bridge is slaved to resonance in order [...]

Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment

Ionescu A.M., Mathieu N., Chovet A., LPCS/ENSERG, FR

In this paper both offset and absolute/relative sensitivities of MAGFET (MAGnetic Field Effect Transistor) are investigated as functions of the drain and gate voltages. Accurate physical and analytical models are developed allowing the identification of [...]

3-D Electrothermal Model of Multifinger, High-Power HBTs

Dhondt F., Barrette J., Rolland P.A., Delage S., IEMN, FR

We present a 3-D electrothermal model based on the finite difference method and applied to GaAs heterojunction bipolar transistors (HBTs). This non-linear model compmes the temperature distribution under static bias conditions for multifinger HBTs, although [...]